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TGV & Glass Interposer

TGV & Glass Interposer

Our advanced TGV (Through Glass Via) and glass interposer solutions provide superior signal integrity, thermal performance, and miniaturization for next-generation semiconductor packaging. Glass substrates enable finer interconnects, lower loss, and better reliability compared to traditional organic materials.
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Our advanced TGV (Through Glass Via) and glass interposer solutions provide superior signal integrity, thermal performance, and miniaturization for next-generation semiconductor packaging. Glass substrates enable finer interconnects, lower loss, and better reliability compared to traditional organic materials.

            

TGV Formation Capabilities

Parameter

Specification

Processable Wafer/Panel Sizes

6", 8", 12" wafers; up to 510×515 mm panels

Standard TGV Aperture

90 μm ± 10 μm

Minimum Aperture Center Distance

>180 μm

Available Glass Thicknesses

100 μm, 150 μm, 200 μm (±10 μm), 430 μm (±20 μm, BF33)

Surface Roughness (Ra)

<30 nm

Total Thickness Variation (TTV)

<25 μm (@8-inch)

Copper Depression Depth

<1 μm

RDL & Build-Up Capabilities

  • Multi-layer RDL support (ABF or PI dielectric)

  • Up to 10 total RDL layers

  • Symmetric or asymmetric build-up structures

  • Fine-line RDL down to 10/10 μm L/S

  • Copper thickness flexibility: 2~40 μm

TGV Metallization Options

  • TGV dia: 80 μm

  • Glass Thickness: 400 μm

  • RDL Cu Thickness: 15±2 μm

Partial Fill (Conformal ECP) Copper coating on via sidewall

Partial Fill (Conformal ECP)
Copper coating on via sidewall

Full Fill (Full ECP) Complete copper via filling

Full Fill (Full ECP)
Complete copper via filling

Product Portfolio

Product Type

Glass ImposerGlass Interposer 

Glass CoreGlass Core

Glass Circuit PlateGlass Circuit Plate 

Description

Thin single-layer glass interposer

Thick single-layer glass core substrate

Multi-layer glass circuit board

Key Features

Thickness <200 μm Multi-layer RDL

Thickness >500 μm Multi-layer RDL

Stacked glass layers Multi-layer RDL

Primary 
Applications

TSV/TGV integration, ultra-thin packaging

Migration from organic to glass substrates

High-density interconnects, glass PoP (Package-on-Package)

Demonstrated Build-Up Examples

ABF Dielectric + Symmetrical Build-up

  • Unit Size: 21 × 21 mm

  • TGV Diameter: 80 μm

  • Dielectric: ABF

  • RDL Structure: 1+2+1 layers (symmetric)

  • RDL Cu Thickness: 12 ± 2 μm

  • RDL L/S: 20 / 20 μm

ABF Dielectric + Symmetrical Build-up

PI Dielectric + Asymmetrical Build-up 

  • Unit Size: 52.5 × 52.5 mm

  • TGV Diameter: 50 μm

  • Dielectric: PI

  • RDL Structure: 2+4 layers (asymmetric)

  • RDL Cu Thickness: 12 ± 2 μm

  • RDL L/S: 15 / 15 μm

PI Dielectric + Asymmetrical Build-up